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RAMP RECOVERY IN P-I-N DIODESBERZ F.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 783-792; BIBL. 9 REF.Article

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EVALUATION OF SPATIAL DEPENDENCE OF BULK TRAP DENSITY IN MOS DEVICESBOARD K; MOHAMMED DARWISH.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5455-5457; BIBL. 7 REF.Article

THE INFLUENCE OF A VOLTAGE RAMP ON THE MEASUREMENT OF I-V CHARACTERISTICS OF A SOLAR CELLVON ROOS O.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 285-288; BIBL. 7 REF.Article

INTERPRETATION OF NON-EQUILIBRIUM MEASUREMENTS ON MOS DEVICES USING THE LINEAR VOLTAGE RAMP TECHNIQUEFARAONE L; SIMMONS JG; AGARWAL AK et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 709-716; BIBL. 11 REF.Article

INCREASED CHARGE CAPACITY IN BREAKDOWN-LIMITED METAL-INSULATED SEMICONDUCTOR HG_1-XCD_XT_E DEVICES USING A RAMPED GATE VOLTAGECHAPMAN RA; BECK JD; KINCH MA et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 419-421; BIBL. 7 REF.Article

NON-STEADY-STATE STUDIES ON MOS DEVICES SUBJECT TO A LINEAR VOLTAGE RAMPNASSIBIAN AG; FARAONE L; SIMMONS JG et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1439-1444; BIBL. 8 REF.Article

THE PROBLEM OF CALCULATING THE FAST-FOURIER TRANSFORM OF A STEP-LIKE SAMPLED FUNCTIONBALCOU Y.1979; IEEE TRANS. INSTRUMENT. MEASUR.; USA; DA. 1979; VOL. 28; NO 2; PP. 97-99; BIBL. 7 REF.Article

NONEQUILIBRIUM RESPONSE OF MOS DEVICES TO LINEARLY VARYING VOLTAGES.NASSIBIAN AG; FARAONE L; SIMMONS JG et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 444-446; BIBL. 4 REF.Article

TRANSIENT RESPONSE OF UNIFORMLY DISTRIBUTED RLC TRANSMISSION LINESCASES M; QUINN DM.1980; I.E.E.E. TRANS. CIRCUITS SYST.; USA; DA. 1980; VOL. 27; NO 3; PP. 200-207; BIBL. 6 REF.Article

NONEQUILIBRIUM RESPONSE OF M.O.S. DEVICES TO A LINEAR VOLTAGE RAMP IN THE PRESENCE OF ILLUMINATIONALLMAN PGC; BOARD K.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 117-120; BIBL. 4 REF.Article

Z-Transform of quantized ramp signalSAMADI, S; OMAIR AHMAD, M; SWAMY, M. N. S et al.IEEE transactions on signal processing. 2005, Vol 53, Num 1, pp 380-383, issn 1053-587X, 4 p.Article

A new technique in ramp response for acoustic imaging of underwater objectsZHANG, X.M; Li, W; Liu, G.R et al.Applied Acoustics. 2002, Vol 63, Num 4, pp 453-465, issn 0003-682XArticle

Switching control of accommodation : experimental and simulation responses to ramp inputsFUCHUAN SUN; STARK, L.IEEE transactions on biomedical engineering. 1990, Vol 37, Num 1, pp 73-79, issn 0018-9294Article

Algorithm for controlling spillback from ramp metersGORDON, R. L.Transportation research record. 1996, Num 1554, pp 162-171, issn 0361-1981Article

LES FONCTIONS ESSENTIELLES EN COMMUTATIONVERBEEK CHRISTIAN.1980; ; FRA; PARIS: DUNOD; DA. 1980; 196 P.; 24 CM; BIBL. 13 REF.; ISBN 2-04-011231-6Book

ANALYSIS OF THE STEP AND RAMP RESPONSE OF A FEEDBACK GAIN-CONTROL SYSTEM.HOFFMAN GR.1978; I.E.E. J. ELECTRON. CIRCUITS SYST.; GBR; DA. 1978; VOL. 2; NO 2; PP. 47-53; BIBL. 3 REF.Article

LIFETIME IN ION IMPLANT DAMAGE GETTERED SILICON BY MOS VOLTAGE RAMPINGNASSIBIAN AG; GOLJA B.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 245-246; BIBL. 5 REF.Article

DETERMINATION OF GENERATION LIFETIME FROM NON-EQUILIBRIUM LINEAR-SWEEP CURRENT AND CAPACITANCE MEASUREMENTS ON AN MOS CAPACITOR.KUPER P; GRIMBERGEN CA.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 3; PP. 549-553; BIBL. 8 REF.Article

LOW COST MOSSBAUER SPECTROSCOPY DRIVE SYSTEM WITH MU A 747 I.C.'S.GANCEDO JR; MARTINEZ ML; OTON JM et al.1978; AN. FIS.; ESP; DA. 1978; VOL. 74; NO 1; PP. 40-44; ABS. SPA; BIBL. 5 REF.Article

THE DETERMINATION OF INTERFACIAL AND BULK PROPERTIES OF GOLD IN M.O.S. STRUCTURES USING QUASIEQUILIBRIUM AND NON-STEADY-STATE LINEAR VOLTAGE-RAMP TECHNIQUESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 121-126; BIBL. 20 REF.Article

AR ION IMPLANT DAMAGE GETTERING OF GENERATION IMPURITIES IN SILICON EMPLOYING VOLTAGE RAMPING AND NITROGEN BACKSCATTERINGGOLJA B; NASSIBIAN AG.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 127-132; BIBL. 15 REF.Article

EXPERIMENTAL RESPONSE OF MOS DEVICES TO A FAST LINEAR VOLTAGE RAMPBOARD K; SIMMONS JG; ALLMAN PGC et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1157-1162; BIBL. 2 REF.Article